Ion implantation of Si has been used to create n+ layers in Be-implanted InGaAs epilayers. A peak electron concentration of 7×1018 cm−3, a sheet resistance of 28 Ω per square, and an average electron mobility of 3000 cm2/Vs are measured in layers implanted with doses of 5.6×1013 cm−2 and 14×1013 cm−2 at 100 and 250 keV, respectively, and proximity cap annealed at 670°C for 15 min. Activation efficiencies of 86 and 38% are found for the low and high energy implants, respectively.
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Choudhury et al. (1982) studied this question.
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