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Multiple energy Be+ ion implantation has been used to produce p-type regions in n-In0.53Ga0.47As (n≃1016 cm−3). A simple technique has been developed for capless annealing of InGaAs up to 700 °C. The activation efficiency of the implanted Be+ is dependent on the implant energy and dosage with a maximum activation of 40% for 50-keV implants. When the total implant dose exceeds 1014 cm−2, substantial diffusion of Be occurs resulting in a p+-n−-n structure. Planar diodes formed by Be+ implantation have a reverse breakdown voltage of 50 V and an ideality factor of 1.5 in the forward direction.
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Tabatabaie‐Alavi et al. (1982) studied this question.
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