Radiogenic Sn defects in ion implanted InP

Radioactive 119 In and 119 Sb, which both populate the 24 keV Mossbauer level of 119 Sn in their nuclear decay, have been incorporated on the two inequivalent substitutional lattice sites in InP. The electronic and vibrational properties of Sn impurity atoms on these sites have been investigated by Mossbauer spectroscopy. The formation and the annealing properties of complex impurity defects have been studied. For substitutional Sn atoms the electronic configuration of the impurities reflects the donor and acceptor character on the two different lattice sites. Debye temperatures determined for the two sites indicate analogous decreasing Sn bond force constants as compared with host-host force constants. Two complex defects are attributed to the association of vacancies to Sn atoms on the two substitutional sites.