Gap-coupled InSb/LiNbO3 acoustoelectric convolver operating at 77 K

A gap-coupled InSb/LiNbO3 acoustoelectric convolver has been fabricated and tested at 77 K. The results suggest the possibility of using a similar structure with a high-density InSb diode array as an acoustically scanned infrared imaging device. Measurements indicate that near optimum bias, the convolution efficiency was −63 dBm, the convolution output was uniform along the device length to within 1.5 dB, the insertion loss was 26 dB, the 1-dB compression point occurred at 18 dBm power input, and the efficiency was constant to ⩽ 3 dB over the range 66–70 MHz.