Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-μm cavity length and with 35–45% differential quantum efficiency have been obtained.
No takes yet. Share an insight, caveat, or question.
Koren et al. (1982) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: