Dielectric Absorption Caused by Traps in MIM/MOS Capacitors: A New Model Validated Through TCAD

We propose here a flexible physics-based model to calculate the capacitance and conductance in MIM and MOS capacitors, accounting for traps with different energy and space distributions in the dielectric. The proposed model is validated against calibrated TCAD simulations. Furthermore, the frequency and temperature dependencies of the loss tangent obtained from the TCAD simulations have been analyzed and compared with experimental trends reported in the literature, highlighting their relation with the trap location in the oxide and the electron trapping process. These findings offer insight into the trap-induced effects in MIM capacitors, helping to determine the physical origin of the dielectric absorption (DA) phenomenon affecting relevant CMOS circuits such as analog-to-digital converters (ADCs).