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July 1, 1981Journal of Applied Physics

Misfit dislocation-free In1−xGaxAs1−yPy/InP heterostructure wafers grown by liquid phase epitaxy

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KNKazuo NakajimaRIKEN Center for Brain ScienceSYSusumu YamazakiTokyo Medical and Dental UniversitySKSatoshi KomiyaPanasonic (Japan)

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Nakajima et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbed978a11c550e098196https://doi.org/10.1063/1.329333
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates1978 · 68 citations
  2. 2On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates1967 · 284 citations
  3. 3Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP1979 · 60 citations
  4. 4The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloys1979 · 82 citations
  5. 5Lattice deformations and misfit dislocations in GaInAsP/InP double-heterostructure layers1978 · 56 citations