We report a detailed experimental study of the influence of electric fields on exciton lifetimes in a GaAs/Alₓ{Ga}_{1{{-}}x}$As coupled-double-quantum-well structure. The energy of the lowest-lying photoluminescent exciton peak was observed to decrease and its decay time was found to increase by over an order of magnitude as the internal electric field was increased. The increase in the decay time is attributed to the change of the exciton transition from spatially direct (i.e., taking place within a single well) to spatially indirect (connecting an electron level in one well with a hole level in the adjacent well).
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Charbonneau et al. (1988) studied this question.
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