n-type doping levels in GaAs up to 5×1018 cm−3 have been obtained by the ion implantation of 400-keV selenium ions at 200 °C followed by 360-keV gallium ions at 200 °C. This is an order of magnitude above the maximum obtained from the implantation of selenium alone.
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J.M. Woodcock (1976) studied this question.
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