Low loss waveguides grown on GaAs using localized vapor phase epitaxy

New type of optical waveguides grown on GaAs by localized epitaxy using vapor phase epitaxy is presented. The guides are grown through a strip opened in a dielectric film and have a triangular cross section. The loss measurements have been performed on waveguides of lengths varying from 1 to 10 mm. Losses as low as 1.5 dB have been found. An original light coupling technique into the guide—through the substrate—has been used. Because of an improved optical confinement due to the structure of the guides and because of their low losses, these waveguides have numerous potential advantages and applications in integrated optics.