Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 1, 1967Journal of Applied Physics

Temperature Dependence of Photoluminescence in Cadmium-Doped Epitaxial GaAs

View Full Paper
Ask AI
Bookmark
Share

Authors

EWE. W. WilliamsUniversity of OttawaRCR. A. ChapmanNational Health Service

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Williams et al. (1967) studied this question.

synapsesocial.com/papers/6a6fbf58f44fa9f079dd3c3ehttps://doi.org/10.1063/1.1709947
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Quantum Efficiency and Radiative Lifetime in <i>p</i>-Type Gallium Arsenide1965 · 132 citations
  2. 2Infrared Transmission and Fluorescence of Doped Gallium Arsenide1964 · 211 citations
  3. 3Optical Transitions Involving Impurities in Semiconductors1963 · 260 citations
  4. 4A photoluminescence study of acceptor centres in gallium arsenide1967 · 54 citations
  5. 5Absorption Edge of Impure Gallium Arsenide1965 · 315 citations