Low dark current and low multiplication noise properties for an In0.53Ga0.47As/InP avalanche photodiode are described. The diode is prepared with an In0.53Ga0.47As light absorption layer and an InP avalanche multiplication region. The lowest dark current density of5.2 × 10⁻⁴A/cm2is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons in
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Susa et al. (1980) studied this question.
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