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This theoretical and experimental study was motivated by a specific need for a solid-state microwave generator with an output efficiency exceeding 20% and focused on the properties of GaAs avalanche transit-time devices. First, the dependence of the ionization rates and drift carrier velocities as a function of electric field and temperature is established. Then several methods of calculation, exact enough to take into account all the important efficiency-limiting effects in the device, are discussed and used to derive theoretical figures for the efficiency of a GaAs IMPATT oscillator, special attention being given to the influence of the doping profile. Finally, the experimental study is described, including device realization and experimentally measured efficiencies, and a comparison between these and the calculated values is done. It is shown that the best calculated performances can reach 30% efficiency and that it is possible to obtain experimentally cw oscillation efficiencies exceeding 20% with GaAs IMPATT devices having special types of doping profile.
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Salmer et al. (1973) studied this question.
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