The GaAa/anodic oxide interface formation was changed by anodizing GaAs at different low electrolyte temperatures. The resulting interface properties are analysed using conventional MOS theory. Effects of growth temperature on GaAs surface conditions and interface properties are presented. Our results qualitatively support the ISB model proposed by Sawada and Hasegawa (1979).
No takes yet. Share an insight, caveat, or question.
Singh et al. (1982) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: