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It is well known that impurities and defects in semiconductors are associated with energy levels in the forbidden gap. Similar states occur at the surface of a semiconductor where the crystal lattice and the symmetry are strongly disturbed. These states are called surface states. Owing to the two-dimensional nature of the surface, their density is measured per unit area, in contrast to bulk states, which are measured per unit volume. A third type of states, similar to surface states, occurs at the interface between two adjacent materials. These states are called interface states. Very often they are also simply called surface states.
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Goetzberger et al. (1976) studied this question.
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