Ruthenium thin films were grown by atomic layer deposition (ALD) from tris(2,2,6,6‐tetramethyl‐3,5‐heptanedionato)ruthenium [Ru(thd) 3 ] and oxygen, at temperatures between 325 °C and 450 °C. All the films were polycrystalline metallic ruthenium as analyzed by X‐ray diffraction (XRD). Impurity contents of the films (< 2.9 at.‐% H, < 1.9 at.‐% C, and < 5.5 at.‐% O) were nearly independent of the Ru(thd) 3 pulse time as analyzed by time of flight elastic recoil detection analysis (TOF‐ERDA). The films had resistivities below 20 μΩ cm and they adhered well to a thin Al 2 O 3 film on glass. Growth rates of 0.36 Å per cycle were obtained at a deposition temperature of 350 °C. The gaseous reaction by‐products were analyzed in situ by quadrupole mass spectrometry (QMS).
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Aaltonen et al. (2004) studied this question.
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