Solution‐based Fabrication of High‐κ Gate Dielectrics for Next‐Generation Metal‐Oxide Semiconductor Transistors

The layer‐by‐layer adsorption of precursor metal alkoxides in solution and post‐annealing at 400 °C affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next‐generation high‐κ gate dielectrics. A void‐free TiO 2 –La 2 O 3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.