The traditional form of the implicit equation for the surface potential (/spl phi//sub s/) in metal-oxide-semiconductor field-effect transistors (MOSFETs) works well except near the flatband point /spl phi//sub s/=0 where it is both unphysical and ill-conditioned mathematically. This represents a significant difficulty for recent surface potential-based models, which require /spl phi//sub s/ evaluation from the accumulation to the strong inversion region. Detailed physical analysis combined with two-dimensional numerical simulations is used to develop a physics-based well-conditioned version of the surface potential equation.
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Wu et al. (2004) studied this question.
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