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December 1, 1975IEEE Transactions on Nuclear Science

Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors

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Authors

HBH. E. BoeschUnited States Department of the ArmyFMF. B. McLeanVerizon (United States)JMJ.M. McGarrityCoolCad Electronics (United States)

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Boesch et al. (1975) studied this question.

synapsesocial.com/papers/6a6fdb7835aa2c282ce12cd2https://doi.org/10.1109/tns.1975.4328098
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