We report 105 °C continuous-wave, electrically pumped operation of a 1526 nm vertical-cavity surface-emitting laser. An InP/InGaAsP active region was wafer bonded to GaAs/AlGaAs mirrors, with a superlattice barrier to reduce the number of nonradiative recombination centers in the bonded active region.
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Karim et al. (2001) studied this question.
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