Low-threshold lasing is achieved at 1.154 μm for an oxide-confined quantum-dot (QD) vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs substrate. The long wavelength emission is obtained through use of an InAs-GaAs QD active region. A continuous-wave (CW) threshold of 502 μA is obtained for a device size of 10-μm diameter, corresponding to a threshold current density of 640 A/cm2.
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Huffaker et al. (1998) studied this question.
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