Temperature Dependence of Phase-Change Random Access Memory Cell

The temperature dependences of phase-change random access memory (PCRAM) cells on different Ge–Sb–Te phase-change recording materials are studied and compared. A Ge 2 Sb 2 Te 5 phase-change film has a larger resistance margin and a higher thermal stability than Ge 1 Sb 2 Te 4 and Ge 1 Sb 4 Te 7 films. The set resistance, reset resistance, resistance margin and threshold voltage of PCRAM cells decrease with increasing temperature. A Ge 2 Sb 2 Te 5 PCRAM cell has a higher thermal stability of threshold voltage than Ge 1 Sb 2 Te 4 and Ge 1 Sb 4 Te 7 PCRAM cells.