Modeling of Gan Hemt by Using an Improved K-Nearest Neighbors Algorithm

A novel black-box modeling method for field effect transistor (FET) based on an improved K-Nearest Neighbors algorithm is proposed in this paper. K-Nearest Neighbors algorithm, which has simple algorithm structure and high accuracy, has shown great potential in regression application. A Taylor series expansion method is employed in nonlinear elements modeling of FET to improve the physical meaning of black-box model. A GaN HEMT power device is used to demonstrate the proposed method. And the experimentation shows that the calculated results using improved K-Nearest Neighbors algorithm based model fit the measurement results well.