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A solid-state sensor using a sputtered LaF3 film was developed for detecting oxygen at room temperature. The EMF of the sensor varied logarithmically with the oxygen partial pressure. The response of the sensor was much improved by the water vapor treatment at 90 °C for 1 h: the 90% response time at 30 °C was as short as ca. 30 s. A sensing mechanism was proposed.
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Miura et al. (1987) studied this question.
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