Resistive switching (RS) characteristics and mechanism of multicomponent oxide (MCO) memory device are studied. MCO based on an amorphous (ZrCuAlNi)Ox active layer with a thin thickness of ∼15 nm is sputter deposited without substrate heating or post-annealing. The device shows forming-free unipolar RS properties of low operation voltage (<1.7 V), long retention time, good endurance, and resistance ratio. The RS property is considered to be dominated by the filamentary conduction due to the presence of oxygen vacancies in the grain boundary-free structure.
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Tulu et al. (2013) studied this question.
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