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We observed cathode-interfaced electroreduction and a variation of oxygen content in an irreversible low resistance state of highly oriented cuprous oxide (Cu2O) films. These local microstructural and stoichiometric changes in hard breakdown of film allow speculation on the unipolar resistive switching mechanism: formation of metallic filaments originating from generation/migration of oxygen ions (O2−) from the cathode and release of oxygen gas through the anode. Based on the as-proposed switching model, endurance switching properties could be modulated from tens up to over 104 switching cycles by controlling ambient gas or the interface between Cu2O and anode.
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Hong et al. (2011) studied this question.
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