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Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In0.22Ga0.78As channel are reported. The negative differential resistance in the drain circuit has a drain current peak-to-valley ratio of more than 1200 at room temperature.
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Favaro et al. (1990) studied this question.
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