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Thin film of 3-phenyldithiopropyltrimethoxysilane (1) was prepared as a photoreactive surface of masked thiol by in-situ reaction of 3-mercaptopropyltrimethoxysilane (2) with diphenyldisulfide before deposition of the film on quartz substrate. The film of 1 undergoes photochemical oxygenation of sulfur atom more efficiently than that of 2 upon KrF laser (248 nm) irradiation, where a thiyl radical is incorporated as a common intermediate.
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Ichinose et al. (1993) studied this question.
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