Insertion of a thin film of aluminum oxide (Al 2 O 3 ) at the interface of electrodes and organic layers has been investigated. Insertion of a thin film of Al 2 O 3 at the interface of the ITO anode and the diamine derivative (TPD) layers, as well as at the interface of the 8-hydroxyquinoline aluminum (Alq 3 ) and the Mg:Ag cathode in the electroluminescent (EL) diode has been examined. The insertion of an Al 2 O 3 layer with a proper thickness was observed to enhances the emission efficiency of the device. The mechanism of quantum efficiency enhancement of the device was studied.
No takes yet. Share an insight, caveat, or question.
Kurosaka et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: