⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

April 1, 1997IEEE Transactions on Electron Devices

Simulation of semiconductor devices with non-ideal metallic contacts

Dietmar Schroeder Ulf Witkowski

View at Publisher

Ask AI

Bookmark

Share

Abstract

A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Schroeder et al. (1997) studied this question.

synapsesocial.com/papers/6a704378e71d69abee087c4b https://doi.org/10.1109/16.563375

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1p-n junction—Schottky barrier hybrid diodeOriginal Research · 1969 · 39 citations
2Comparison of transport models far the simulation of degenerate semiconductorsOriginal Research · 1994 · 6 citations
3Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion IrradiationIEEE Transactions on Electron Devices · Fri,
4P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and CharacterizationIEEE Transactions on Electron Devices · Tue,
5Modeling Leakage Current Variations Starting From Threshold Voltage Shift in SiC MOSFETs Submitted to Positive Gate StressIEEE Transactions on Electron Devices · Tue,

More from IEEE Transactions on Electron Devices

Investigation of Gate Field-Plate Effects on f max Improvement in GaN HEMTs for RF ApplicationsFri,
Mechanism Analysis and Small-Signal Modeling of β -Ga 2 O 3 -Based Enhancement-Mode FinFETsMon,
Surface Mount Ultra-Thin Millimeter-Wave Bandpass Filter Chip Based on Lithium Niobate With Ultralow Loss and Sharp Roll OffTue,
Rapidly Erasable Ambipolar SnO Charge-Trap Memory With Low Dynamic Energy ConsumptionWed,
Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Silicon for mm-Wave Amplifiers, Switches, and LNAsMon,