Space-charge-limited currents in materials with Gaussian energy distributions of localized states

A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density.