Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 15, 1991Physical review. B, Condensed matter

Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si

View Full Paper
Ask AI
Bookmark
Share

Authors

DRDaniel H. RichHarvard UniversityAKA. KsendzovCalifornia Institute of TechnologyRTR. W. TerhuneCalifornia Institute of Technology

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Rich et al. (1991) studied this question.

synapsesocial.com/papers/6a7065796c240de38cdbca10https://doi.org/10.1103/physrevb.43.6836
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polarized photoluminescence study1990 · 15 citations
  2. 2Photoreflectance study of gallium arsenide grown on Si1990 · 18 citations
  3. 3Band-edge excitons in gallium arsenide on silicon1989 · 22 citations
  4. 4Near-gap photoluminescence of GaAs grown directly on silicon1988 · 23 citations
  5. 5Piezo-Electroreflectance in Ge, GaAs, and Si1968 · 854 citations