The first measurements of dynamic spectra of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation are reported. A spectral broadening factor α was determined from the relative sideband strength to the carrier, and it decreased with increasing operating electric field in the modulator. The estimated α-value for full modulation was |α| = 2.3, which can be reduced by designing a modulator to give a more effective change of electro-absorption.
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Suzuki et al. (1986) studied this question.