We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1.3 μm InGaAsP/InP laser chip. The maximum available gain was 20 at an input power of −19.2 dBm, and it reduced to 10 at an input power of −10.5 dBm. High on/off extinction ratios and side-mode suppression >100:1 were achieved at about 1 Gbit/s (NRZ) modulation rate.
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Lee et al. (1984) studied this question.
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