January 30, 1986Electronics Letters
High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
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Abstract
Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 23 pm are described. The impulse response is 160 ps FWHM at −10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.
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Bowers et al. (1986) studied this question.