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We report the first observation of carrier heating effects for In1−xGaxAsyP1−y 1.3-μ light emitting diodes, including variation of carrier temperature with injection current and ambient temperature. These results demonstrate that carrier temperature reaches 400 K at 2.5×104 A/cm2 (260 mA) for an LED with room-temperature ambient. Such significant heating must be taken into account in modeling device performance.
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Shah et al. (1981) studied this question.
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