Answers are grounded in this paper and cite their sources.
We have calculated the nonradiative Auger recombination rate as a function of temperature in InGaAsP. Inclusion of this process can explain the observed temperature dependence of threshold and carrier lifetime of both the 1.3- and 1.55-mm InGaAsP double-heterostructure lasers. The threshold calculations are carried out using the Halperin-Lax-Kane band model, Stern’s matrix element, and Beattie-Landsberg theory of Auger recombination. Evidence of the Auger recombination is provided by a sublinearity of the spontaneous emission as a function of injection current.
No takes yet. Share an insight, caveat, or question.
Dutta et al. (1981) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: