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Nonradiative recombination with the rate strongly dependent on the injected carrier density n as αn2–4 has been found to be the cause of the output saturation in 1.3-μm InGaAsP/InP surface emitting double heterostructure light emitting diodes. It has been found that this nonradiative recombination is also responsible for the strong temperature sensitivity of InGaAsP/InP double heterostructure laser threshold current.
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Uji et al. (1981) studied this question.
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