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We describe the fabrication and characteristics of a small-area (diameter ≃20 μm) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long-wavelength optical receivers. The high sensitivity (hfe ≃100 at 20-nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain-bandwidth product in excess of 1.7 GHz.
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Campbell et al. (1981) studied this question.
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