A method for the preparation and doping of various composition of single‐crystal is described. By measuring the optical energy gap and the lattice parameter of the synthesized mixed crystal the iodine vapor epitaxial growth technique is found to give a one‐to‐one ratio of transport of and from source to substrate. The variation of Hall mobility with composition from mixture has been investigated. The edge emission peak of diodes made with alloys or less than varies linearly between the direct energy gap of and .
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San-Mei Ku (1963) studied this question.
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