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We report stimulated emission associated with Zn-O-complex recombination transitions in GaP:Zn-O and with NN-pair lines in GaAs_1-xPₓ:N (x=0.56). Laser operation (cw, 77^∘{}K) characteristic of inhomogeneously broadened transitions is exhibited clearly by NN-pair lines in GaAsP and probably occurs for Zn-O pairs in GaP.
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Holonyak et al. (1972) studied this question.
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