The external electroluminescent quantum efficiency at 25°C of GaP p-n junctions grown by liquid-phase epitaxy on solution-grown substrates may be increased by as much as an order of magnitude by annealing, after growth, at temperatures in the range 400°C–725°C for times ∼16 hr. Typical efficiencies obtained range from 1–2%. The I-V characteristic consists of two parallel components: a small tunneling current and a recombination current in the space charge region. The effect of annealing is to increase the efficiency in proportion to the decrease in current, at a given bias.
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Logan et al. (1967) studied this question.