Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions

Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) has been achieved by pumping the crystal below the fundamental energy gap on the NN3 transition. Photoluminescence experiments on the non-N-doped epitaxial GaAs1−xPx underlying the thin (≤ 25 μ) N-doped layer indicate that the absorption of He–Ne laser pump photons in GaAs1−xPx:N (x = 0.37) occurs only on the NN3 transition.