We describe the physical basis of Jet Vapor Deposition (JVD), in which sonic, inert gas ‘‘jets in low vacuum’’ are used as vapor sources for depositing films. A ‘‘multiple jet, moving substrate’’ strategy enables deposition of a wide variety of multicomponent, multilayer and ‘‘host–guest’’ materials generated from metals, semiconductors, and dielectrics. We show how jet structure, behavior, and vapor transport underlie advantages of JVD such as high rate deposition and flexibility in multicomponent synthesis.
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Halpern et al. (1994) studied this question.