Flexible Inorganic/Organic Hybrid Thin‐Film Transistors Using All‐Transparent Component Materials

Inorganic-organic hybrid TFTs have been fabricated at room temperature using IAD-derived high-quality semiconducting In2O3 and a crosslinked spin-coatable polymer gate dielectric. TFTs exhibiting field-effect mobilities up to 160 cm2 V–1 s–1, on Si and 10 cm2 V–1 s–1 on PET substrates have been demonstrated. TFTs on PET combine good transport characteristics as well as optical transparency and flexibility.