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The internal‐friction relaxation peak observed in silicon single crystals [6, 7] is discussed using Brailsford's concept of “built‐in” kinks on dislocations. The numerical estimates of the theory agree satisfactorily with the experimental data. The correlation of two theories based on thermally generated and “built‐in” kinks is also considered.
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Kromer et al. (1967) studied this question.
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