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March 29, 1993Applied Physics Letters

Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist

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WCWei ChenUniversity of Science and Technology of ChinaHAH. AhmedChongqing University

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Chen et al. (1993) studied this question.

synapsesocial.com/papers/6a708006439bab0cabc331d1https://doi.org/10.1063/1.109609
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