A large blue shift of the bandgap 90 nm, in an 1nGaAsP/InP quantum well (QW) pin laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110 cm-1 to only 4 cm-1. No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques.
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He et al. (1995) studied this question.
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