Optically pumped laser oscillation at ≊2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor deposition

Photopumped pulsed stimulated emission at 2.9 μm in a HgCdTe layer grown by metalorganic chemical vapor deposition on a CdTe substrate was studied as a function of temperature. The threshold power of the HgCdTe laser (photoexcited by a GaAs diode laser) increased from 0.04 W at 12 K to 1.58 W at 150 K. Above 50 K, the temperature dependence of the threshold is exponential, yielding a T0 of 31 K. From the observed laser emission wavelength a Cd mole fraction of x=0.422 was determined. The far-field angular full width at e−2 of peak intensity was 5.5° and 9.5° perpendicular and parallel to the film plane, respectively.