The etch pattern of (001) and (110) LEC‐GaP doped with sulphur (N D N A in the range from 3–7 × 10 17 cm −3 ) do not only show dislocation etch pits but fine pits, so‐called “saucer pits” (S‐pits). The distribution of S‐pits, their etching behaviour and transmission electron microscope observations of etched samples indicated a clear correlation between S‐pits and microdefects (fauted‐, prismatic dislocation loops and precipitates).
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Gottschalch et al. (1981) studied this question.
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